Si3N4 / SiO2 passivation layer on InP for optimization of the 1.55μm MQW FP laser performance

摘要

The importance of the passivation in semiconductor surfaces as chemical passivation, electrical passivation and leakage current blockage is studied. Simulation of the multiple quantum well Fabry-Perot laser diode with passivation layer is done by making the assumption that the passivation interface has an ideal surface condition. The simulation model included the heat flow condition in the passivation interface. The simulation results are in good agreement with experiment. Threshold current as low as 21mA is achieved with 1.8um Si3N4 passivation layer. It is found that Si3N4 passivation layer improve the laser diode performance compare to SiO2 passivation. Thicker passivation help in prevention of the leakage current.