Radiation tolerance investigation of XAMPS detectors

摘要

Tolerance of XAMPS detectors to x-ray photons was investigated at the National Synchrotron Light Source. Two experiments were carried out: first JFETs with the same characteristics of the in pixel transistor were irradiated; then the radiation hardness of a 64×64-pixel detector was investigated. An increase of leakage current was observed and significantly reduced after a very low temperature forming gas annealing. These results confirm that this detector is suitable for application at IV generation light sources.