2D Quantum Mechanical Device Modeling and Simulation: Single and Multi-fin FinFET

摘要

We propose a novel device structure (Si_(1-x)Ge_x/Si/Si_(1-x) Ge_x hetero-structure), which is called "center-channel (CC) double-gate (DG) MOSFET,". The device performance of the proposed FET structure was investigated with our two-dimensional quantum-mechanical simulator which is based upon the self-consistent solution of Poisson-Schroedinger equations and the current continuity equation. The CC operation of CC-NMOS is confirmed by considering the band lineups as well as the lowest energy wave function. Especially, the lowest energy wave function of CC-MOSFET is carefully compared with those of the conventional DG-NMOS in order to observe the distinct feature of the proposed FET structure. Furthermore, device optimization for the CC operation and short-channel effects (SCE) was performed in terms of Ge concentration, gate length (L_g), and Si_(1-x)Ge_x/Si/Si_(1-x)Ge_x scale variation.