2D Quantum Mechanical Device Modeling and Simulation: Single and Multi-fin FinFET

摘要

A two-dimensional quantum mechanical modeling has been performed to simulate a nano-scaie FinFET by obtaining the self-consistent solution of coupled Poisson and Schroedinger equations. Calculated current-voltage (Ⅰ-Ⅴ) curves are carefully compared with experimental data to verify the validity of our theoretical work. The transconductance (G_(mmax)=380) is optimized through varying the Si-fin thickness (T_(fin)) from 10nm to 75nm. In order to ascertain the current drivability of FinFET, we investigated the dependence on the number of fins. The electron distributions for single and multiple fins FinFETs are reported with several gate voltage V_g=1.5V, -0.3V, 1.5V. In addition, calculated Ⅰ_d-Ⅴ_g curve of single fin FinFET is also compared with three and five fins FinFET. From these simulation results, the mechanism of the formation of channel and high current drivability of multiple fins FinFET can be understood.