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Power Blue and Green Laser Diodes and their Applications

机译:功率蓝色和绿色激光二极管及其应用

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摘要

InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 121m brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 201m. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R&D samples with up to 200mW in cw-operation. An optical output power of l00mW is reached at 215mA, a current level which is suitable for long term operation.Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R&D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25℃ are presented.
机译:现在,已经成功建立了基于InGaN的绿色激光二极管,其输出功率高达50mW,可用于从平整到特殊照明效果以及121m亮度的移动投影的各种应用。将来,可见光单模轮廓激光器的最大市场潜力可能是201m的激光投影。因此,需要具有更高功率的直接绿色单模激光二极管。我们发现自发热是高电流运行的限制因素。我们介绍了经过改进的R&D样品的功率电流特性,其连续工作功率高达200mW。在215mA电流下可达到100mW的光输出功率,该电流水平适合长期运行。蓝色InGaN激光二极管也是产生基于磷光体的高亮度绿色光源的理想光源。我们提出了一种基于LARP(激光激活远程荧光粉)的光引擎,该引擎可用于屏幕上数千流明的商务投影仪。我们讨论与LED光引擎相比,基于激光的系统的优势。 LARP需要输出功率高于1W的高效蓝色功率激光二极管。 LARP的未来市场渗透将要求降低成本。因此,我们研究了更高功率水平的新设计。提出了在25℃C座连续波工作时功率电流特性高达4W的R&D芯片。

著录项

  • 来源
    《Novel in-plane semiconductor lasers XII》|2013年|86400G.1-86400G.8|共8页
  • 会议地点 San Francisco CA(US)
  • 作者单位

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    OSRAM GmbH, Nonnendammallee 44, 13629 Berlin, Germany;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    InGaN laser; direct green laser; blue power laser;

    机译:InGaN激光;直接绿激光蓝光激光;

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