Institute of Experimental Physics, University of Magdeburg, PO Box 4120, 39016 Magdeburg;
Institute of Experimental Physics, University of Magdeburg, PO Box 4120, 39016 Magdeburg;
Institute of Experimental Physics, University of Magdeburg, PO Box 4120, 39016 Magdeburg;
Institute of Experimental Physics, University of Magdeburg, PO Box 4120, 39016 Magdeburg;
Institute of Solid State Physics, University of Bremen, PO Box 330440, 28334 Bremen;
Institute of Solid State Physics, University of Bremen, PO Box 330440, 28334 Bremen;
Institute of Solid State Physics, University of Bremen, PO Box 330440, 28334 Bremen;
1. Institute of Physics, University of Giessen, Heinrich Buff Ring 16, 35392 Giessen;
1. Institute of Physics, University of Giessen, Heinrich Buff Ring 16, 35392 Giessen;
机译:原子层沉积Al_2O_3 / GaN金属-绝缘体-半导体电容器的界面陷阱表征
机译:氨分子束外延生长n-GaN中陷阱的深层光学和热光谱
机译:光学和热激发深能级缺陷谱仪表征InAlN中的陷阱
机译:使用热敏和光学促进光谱法在GaN中进行深度捕集性
机译:用于高频应用的氮化铝镓/氮化镓HEMT中的陷获效应:使用大信号网络分析仪和深层光谱学进行建模和表征。
机译:成长中子辐照的氨热合成GaN中陷阱的脉冲光电离光谱
机译:热导纳光谱法的IngaN / GaN多量子阱结构的电气表征