A NEW JUNCTION TECHNOLOGY BASED ON SELECTIVE CVD OF SIGE ALLOYS FOR CMOS TECHNOLOGY NODES BEYOND 30 NM

摘要

Future CMOS technology nodes bring new challenges to formation of source/drain junctions and their contacts, which require fundamentally new approaches. In this paper, we present an overview of a new technology designed to meet the demands of the future technology nodes beyond 30 nm. The new technology is based upon selective deposition of boron or phosphorus doped SiGe alloys at temperatures less than 800℃ in source/drain regions recessed to the desired junction depth. Germanosilicides of Ni and Pt are used to form self-aligned, low resistivity contacts to the junctions. The results indicate that the technology offers great promise in meeting all demands of the end-of-the-roadmap junctions and their contacts.