首页> 外文会议>The Ninth International Display Workshops (IDW '02) Dec 4-6, 2002 Hiroshima, Japan >Improved Electron Emission Characteristics of BSD (Ballistic Electron Surface-Emitting Display) on a Glass Substrate Fabricated with Low Temperature Process
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Improved Electron Emission Characteristics of BSD (Ballistic Electron Surface-Emitting Display) on a Glass Substrate Fabricated with Low Temperature Process

机译:低温工艺制造的玻璃基板上BSD(弹道电子表面发射显示器)的电子发射特性的改善

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摘要

Ballistic electron Surface-emitting Display (BSD) is fabricated on a PDP glass substrate with low temperature process. Electrochemical oxidation (ECO) technique is introduced to reduce process temperature. Electron emission characteristics are improved with annealing at 550℃ after ECO process. It is found that eliminating H_2O species from ECO-formed SiO_2 is crucial to improve electron emission characteristics. Thermal durability is also evaluated and no degradation is observed after vacuum encapsulation process with frit sealing at the temperature of 410℃ in N_2 gas. Vacuum encapsulated BSD model is fabricated using frit sealing and electron emission pattern is observed.
机译:弹道电子表面发射显示器(BSD)是通过低温工艺在PDP玻璃基板上制造的。引入了电化学氧化(ECO)技术以降低工艺温度。 ECO处理后在550℃退火可改善电子发射特性。发现从ECO形成的SiO_2中消除H_2O种类对于改善电子发射特性至关重要。还评估了热耐久性,并且在N_2气体中在410℃的温度下用玻璃料密封真空封装工艺后,未观察到降解。真空封装的BSD模型使用玻璃料密封制成,并观察到电子发射模式。

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