Ion-Induced Secondary Electron Emission Characteristics of Compound Oxide Materials - Automatic Measuring System -

摘要

Compound oxides have been expected as a candidate for new protecting materials for ac plasma displays (PDPs), because they are made by the sintering method, which enables the source materials to mix with required ratios homogeneously. Sintered material of MgO is starting point for evaluating compound oxide as protecting material of ac-PDPs. In the present paper, we measured ion-induced secondary electron emission (γ _i) about thin-film of MgO prepared by evaporating sintered materials, and compare them to that prepared by evaporating crystalline MgO. It is clarified that the thin-film of MgO evaporated from sintered material has the same value of γ_i as that of crystalline MgO, or more. For these measurements we tried to design and make automatic measuring system for γ_i in order to achieve fine resolution and high precision.