Universal scaling flow diagram for magnetoconductance in disordered GaAs layers

摘要

Development of the unified scaling theory for the integer and the fractional quantum Hall effect resulted in the derivation of exact expressions for the flow lines of the coupled evolution of the Hall (G_(xy)) and diagonal (G_(xx)) conductance components with decreasing temperature [B.P. Dolan (1999)]. The lines have a universal shape independent of details of the two-dimensional system. In strongly disordered GaAs layers, the temperature driven flow lines are accurately described by the theory.