RAMAN SCATTERING FROM LOW-DIMENSIONAL SEMICONDUCTORS

摘要

The above consideration of off-resonance Raman scattering from nanosized semiconductors shows that reduced dimensionality causes significant changes in the first order Raman band. This is due to relaxation of the wave vector selection rule. The experimental results described illustrate that the Raman scattering technique can be successfully applied to nanosized materials. Valuable information can be obtained about: interface-induced disorder in multilayers, interface alloying, crystallization of ultra-thin amorphous films, phase separation in supersaturated solutions, the crystallinity of nanostructured materials, nanocrystal size and shape, lattice contraction, etc. Moreover, using resonance Raman scattering, not discussed here, one can also investigate the electronic structure of low-dimensional semiconductors.