ELECTRON-HOLE PAIR REVERSED DRIFT IN SOI STRUCTURE

摘要

The calculation of electron-hole pair drift velocity was performed in n-silicon for different field strength values. It was shown that the velocity changes its sign at field greater than some critical value, and the reversed ambipolar drift takes place. This field value is the less the closer electron and hole concentration ratio to one. The results of calculation were verified by experiments. They were performed on the SOI structure. This structure allows us to create the high electric field in the silicon film without any sufficient film heating.