FIXED OXIDE CHARGE IN Ru-BASED CHEMICAL VAPOUR DEPOSITED HIGH-κ GATE STACKS

摘要

We have analysed capacitance - voltage curves of metal-oxide-semiconductor structures containing Al_2O_3, HfO_2, HfSiO_x and Gd_2O_3 dielectric films prepared by metal-organic chemical vapour deposition (MOCVD). The Ru gate electrode was grown by MOCVD. The structures with MOCVD grown Ru electrode exhibited fixed charge density of about 10~(12) cm~(-2). The structures were submitted to post - deposition annealing in oxygen, forming gas (90% N_2 + 10% H_2) ambient. Post-deposition treatment significantly reduced fixed oxide charges in studied metal-oxide-semiconductor structures.