School of Electrical Electronics Engineering, Nanyang Technological University, Singapore,Institute of Microelecrtonics, A*STAR (Agency of Technology Research), Singapore,GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore;
School of Electrical Electronics Engineering, Nanyang Technological University, Singapore,Singapore University of Technology Design (SUTD), Singapore;
Institute of Microelecrtonics, A*STAR (Agency of Technology Research), Singapore;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore;
School of Materials Science and Engineering, Nanyang Technological University, Singapore;
School of Materials Science and Engineering, Nanyang Technological University, Singapore;
Institute of Microelecrtonics, A*STAR (Agency of Technology Research), Singapore;
Institute of Microelecrtonics, A*STAR (Agency of Technology Research), Singapore;
School of Electrical Electronics Engineering, Nanyang Technological University, Singapore;
机译:垂直硅纳米线二极管与硅化镍诱导的掺杂剂偏析
机译:锗化诱导的掺杂物离析技术调制镍锗化物肖特基二极管的肖特基势垒高度
机译:用于高性能电子产品的硅到硅化镍轴向纳米线异质结构
机译:硅化镍诱导掺杂剂偏析对垂直硅纳米线二极管性能的影响
机译:通过点接触反应,纳米硅器件的镍硅/硅/硅镍和铂硅/硅/铂硅纳米线异质结构形成纳米硅化物。
机译:高密度垂直硅纳米线的发展及其在异质结二极管中的应用
机译:具有侵入镍 - 硅化物触点的硅纳米线晶体管
机译:辐射诱导偏析对镍硅合金延性的影响