Solution-processed ZnO Single Nanoparticle Transistor Using Water-based Dispersions

摘要

An integration technique for zinc oxide field-effect transistors processed from nanoparticulate water-based solutions is presented. The devices are single nanoparticle transistors based on drain/source Schottky barriers. Integrated on p-doped silicon standard substrates, the devices showed n-type characteristics and reasonable performance. The threshold voltage, the maximum charge carrier mobility and the current modulation were -0.13 V, 0.05 cm~2/Vs and 5 × 10~3, respectively, whereas the supply voltage and gate bias were ＜ 5 V at maximum. Because it was expected that nanoparticulate Schottky barrier transistors are subject to some remarkable effects, the conduction mechanisms were examined.