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Growth and characterization of Cu_2ZnSnS_4 nanostructures using anodized aluminum as the growth mask

机译:以阳极氧化铝为生长掩膜的Cu_2ZnSnS_4纳米结构的生长和表征

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In this paper we report the growth and characterization of Cu_2ZnSnS_4 (CZTS) nanostructures by co-electrodeposition technique using CuCl_2, SnCl_2 and ZnCl_2 as sources and choline-based ionic liquid (IL) as the electrolyte. X-ray diffraction analysis of CZTS thin films grown by this technique indicated that the films have a kesterite structure with preferred grain orientation along (112). It is found that the energy bandgap of the material is about 1.49eV and the optical absorption coefficient is in the order of 10~4cm~(-1). Anodized aluminum oxide (AAO) was used as the growth mask for the growth of the nanostructures. Anodization of the aluminum foil was carried out in phosphoric acid solution at 1°C and a potential of 40 to 100V was applied. Sulfurization of the rods was performed in elemental sulfur vapor at 450°C for four hours using N_2 as the ambient gas. Experimental results show that nanotubes were formed using the technique and the diameter can be well controlled by varying the applied potential in the anodization process. Electron diffraction experiments show that a mixture of single- and poly-crystalline nanostructures was found.
机译:本文以CuCl_2,SnCl_2和ZnCl_2为源,胆碱基离子液体(IL)为电解质,通过共电沉积技术报道了Cu_2ZnSnS_4(CZTS)纳米结构的生长和表征。通过这种技术生长的CZTS薄膜的X射线衍射分析表明,该薄膜具有沿(112)方向具有较好晶粒取向的硅藻土结构。结果表明,材料的能带隙约为1.49eV,光吸收系数约为10〜4cm〜(-1)。阳极氧化铝(AAO)用作纳米结构生长的生长掩模。在1℃的磷酸溶液中对铝箔进行阳极氧化,并施加40至100V的电势。使用N_2作为环境气体,在元素硫蒸气中于450°C进行棒的硫化四个小时。实验结果表明,使用该技术可以形成纳米管,并且可以通过改变阳极氧化过程中施加的电势来很好地控制直径。电子衍射实验表明,发现了单晶和多晶纳米结构的混合物。

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