Synthesis of GaN Nanowires Using Gold Nanoparticles on Plasma-Activated Silicon Substrate

摘要

The gallium nitride nanowires of different diameters were grown through the vapor-liquid-solid growth mechanism by using gold nanoparticles as a catalyst on plasma-treated silicon substrate. The Si substrates were activated by plasma treatment and followed by immersion in olefinthiolate protected gold nanoparticles solutions to stain the catalyst on substrate surface. Scanning electron microscope images revealed that the size of nanoparticles and the diameter of nanowires were associated with each other and demonstrated the confinement effect of vapor-liquid-solid growth mechanism as well. X-ray diffraction pattern and element analysis suggest that the nanowires were wurtzite structure and no impurity involved during the growth process.