Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR, 72701, USA,Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA;
Department of Physics, University, of Arkansas, Fayetteville, AR, 72701, USA;
Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR, 72701, USA,Department of Physics, University, of Arkansas, Fayetteville, AR, 72701, USA,Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA;
Plasmon; nanogap; sub-10nm; nanofabrication; scalable nano; electron beam lithography (EBL); Plasmonic enhancement;
机译:通过等离子增强应用的纳米掩膜技术制备亚光刻限制的结构。
机译:嵌段共聚物光刻技术制备的亚10纳米石墨烯纳米带阵列场效应晶体管
机译:通过纳米压印光刻技术制备的亚纳米带宽小于10 nm的石墨烯纳米网中的带隙和子带的形成
机译:通过纳米掩模亚10 nm光刻技术制造的等离子体结构
机译:通过等离子增强应用的纳米掩膜技术制备亚10纳米金属结构
机译:使用纳米球刻蚀,软刻蚀和等离子刻蚀制造的等离子纳米结构
机译:使用纳米球刻蚀,软刻蚀和等离子刻蚀制造的等离子纳米结构