NanoSYD, Mads Clausen Institute, University of Southern Denmark, Alsion 2, DK-6400,rnSonderborg, Denmark;
rnNanoSYD, Mads Clausen Institute, University of Southern Denmark, Alsion 2, DK-6400,rnSonderborg, Denmark;
rnNanoSYD, Mads Clausen Institute, University of Southern Denmark, Alsion 2, DK-6400,rnSonderborg, Denmark;
rnrnDepartment of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT,rnUnited Kingdom;
rnDepartment of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT,rnUnited Kingdom;
rnrnNanoSYD, Mads Clausen Institute, University of Southern Denmark, Alsion 2, DK-6400,rnSonderborg, Denmark;
Organic semiconductors; organic nanofibers; in-situ growth; nanofiber integration;
机译:ECR AR等离子CVD的原位B掺杂Si薄膜的电气性能和B深度剖面,无基质加热
机译:原位分子氧暴露对原子层沉积生长氧化锌薄膜电学性能的影响
机译:原位衬底加热和沉积后退火对反应溅射生长钽氧化物薄膜组成和电性能的影响
机译:原位种植和转移有机纳米纤维的电气性能
机译:铁磁金属与分子束外延生长的化合物半导体之间的界面的原位表面,化学,电学表征。
机译:硫属元素钝化:一种控制GaAs纳米线的形态和电学性质的原位方法
机译:原位 i>通过DC溅射生长的铝薄膜电阻率和电子束蒸发的观察
机译:mBE生长的砷掺杂Hg(1-x)Cd(x)Te外延层的电活化和电学性质