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Structural, optical and magnetic properties of highly oriented transition metal (Mn/Co/Ni/Cu) doped ZnO thin films prepared by PLD

机译:用PLD制备的高取向过渡金属(Mn / Co / Ni / Cu)掺杂ZnO薄膜的结构,光学和磁性

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摘要

ZnO doped with transition metal (TM) thin films were grown by pulsed laser deposition. XRD pattern reveals that all the ZnTMO films have c-axis orientation normal to the substrate. The reciprocal space mapping shows that the crystallinity of ZnTMO film deteriorates at higher doping of TM. All the TM doped ZnO films have transmittance greater than 75% in the visible region. The band gap of the ZnTMO thin films shows red shift on doping with Ni and Cu where as blue shift is observed for Co and Mn which increases with TM concentration. The copper doped ZnO thin film shows green PL emission at 542 nm along with the band edge emission at 385 nm. But other TM doping shows only band edge emission (385nm) and its intensity decreases at higher doping percentage. The presence of non-polar E_2~(high) and E_2~(low) Raman modes in thin films indicates that 'TM' doping do not alter the wurtzite structure of ZnO. The magnetic studies of the TM doped ZnO shows room temperature ferromagnetism.
机译:通过脉冲激光沉积生长掺杂有过渡金属(TM)薄膜的ZnO。 XRD图谱表明所有ZnTMO膜都具有垂直于衬底的c轴取向。相互空间映射表明,ZnTMO薄膜的结晶度在TM掺杂较高时会降低。所有TM掺杂的ZnO薄膜在可见光区域的透射率均大于75%。 ZnTMO薄膜的带隙在掺杂Ni和Cu时显示出红移,其中观察到Co和Mn的蓝移随TM浓度的增加而增加。铜掺杂的ZnO薄膜在542 nm处显示绿色PL发射,在385 nm处显示带边缘发射。但是其他TM掺杂仅显示出带边发射(385nm),并且其强度在较高的掺杂百分比下会降低。薄膜中存在非极性E_2〜(高)和E_2〜(低)拉曼模态表明'TM'掺杂不会改变ZnO的纤锌矿结构。 TM掺杂的ZnO的磁性研究表明室温铁磁性。

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  • 会议地点 San Francisco CA(US);San Francisco CA(US)
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    Nanophotonic and Optoelectronic Device Laboratory, Department of Physics, Cochin University of Science and Technology;

    Nanophotonic and Optoelectronic Device Laboratory, Department of Physics, Cochin University of Science and Technology;

    Nano Science Laboratory, Institute Instrumentation Centre, IIT Roorkee;

    Nano Science Laboratory, Institute Instrumentation Centre, IIT Roorkee;

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