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Structural, optical and magnetic properties of highly oriented transition metal (Mn/Co/Ni/Cu) doped ZnO thin films prepared by PLD

机译:高温过渡金属的结构,光学和磁性(Mn / Co / Ni / Cu)掺杂ZnO薄膜由PLD制备

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ZnO doped with transition metal (TM) thin films were grown by pulsed laser deposition. XRD pattern reveals that all the ZnTMO films have c-axis orientation normal to the substrate. The reciprocal space mapping shows that the crystallinity of ZnTMO film deteriorates at higher doping of TM. All the TM doped ZnO films have transmittance greater than 75% in the visible region. The band gap of the ZnTMO thin films shows red shift on doping with Ni and Cu where as blue shift is observed for Co and Mn which increases with TM concentration. The copper doped ZnO thin film shows green PL emission at 542 nm along with the band edge emission at 385 nm. But other TM doping shows only band edge emission (385nm) and its intensity decreases at higher doping percentage. The presence of non-polar E2~(high) and E2~(low) Raman modes in thin films indicates that 'TM' doping do not alter the wurtzite structure of ZnO. The magnetic studies of the TM doped ZnO shows room temperature ferromagnetism.
机译:ZnO掺杂有过渡金属(TM)薄膜通过脉冲激光沉积生长。 XRD图案显示,所有ZnTmo膜的所有ZnTmo膜都具有正常的基板的C轴取向。倒数空间映射表明,ZnTMO膜的结晶度在Tm的较高掺杂下劣化。所有TM掺杂的ZnO膜在可见区域中的透射率大于75%。 ZnTMO薄膜的带隙显示掺杂的红色移位,用Ni和Cu以TM浓度增加的CO和Mn观察到蓝色移位。铜掺杂的ZnO薄膜显示在542nm处的绿色PL发射以及385nm处的带边缘发射。但其他TM掺杂仅显示带边缘发射(385nm),其强度在更高的掺杂百分比下降。在薄膜中存在非极性E2〜(高)和E2〜(低)拉曼模式表明'TM'掺杂不会改变ZnO的紫零结构。 TM掺杂ZnO的磁性研究显示室温铁磁性。

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