Investigation of maple-deposited DNA films for graphene-based device applications

摘要

In this study, we investigate a new technique to fabricate DNA-CTMA films with tunable properties. MAPLE is, for the first time, explored to deposit DNA-CTMA dielectric films on top of epitaxially grown graphene on silicon carbide (SiC) substrate. Silicon dioxide (SiO_2) is commonly used as a gate insulator in graphene based field effect transistors (GFETs) in a top gate configuration. The high temperature deposition of SiO_2 on graphene is known to cause damage to the surface of the graphene leading to poor device operation. We propose an alternative gate insulator based on a bio-organic (DNA-CTMA) material processed and deposited at room temperature (RT) using MAPLE. Hall measurements run before and after DNA-CTMA deposition showed no change in the type of conductivity as well as charge carrier mobility.