A novel nonvolatile memory using SiO_x-cladded Si quantum dots

摘要

This paper presents characteristics of a novel quantum dot gate nonvolatile memory (QDNVM) whose threshold shift can be varied by adjusting the duration and magnitude of the Programming Voltage pulse applied at the drain end. For example, in long-channel FET like structures, we observed a threshold voltage shift (ΔV_t) of 1 V for 10V/10μs stress pulse. Our preliminary data suggest: (ⅰ) faster 'Write' time and (ⅱ) longer retention time for these devices as compared to conventional Si nanocrystal gate nonvolatile memories reported in the literature.