A solution processed nonvolatile resistive memory device with Ti/CdSe quantum dot/Ti-TiOx/CdSe quantum dot/indium tin-oxide structure

摘要

We report a Ti-TiOx/quantum dot based bipolar nonvolatile resistive memory device. The device has ON/OFF ratio 100 and is reproducible. The memory device showed good retention characteristics under stress and excellent stability even after 100000 cycles of switching operation. The memory devices are solution processed at room temperature in ambient atmosphere. The operating mechanism is discussed based on charge trapping in quantum dots resulting in Coulomb blockade effect with the metal-oxide layer acting as the barrier to confine the trapped charges. The mechanism is supported by negative differential resistance (NDR) observed exclusively in the ON state.