Process modification to reduce damage to reactive ion etched surfaces

摘要

Abstract: An experimental investigation was carried out to verify the effect of process modification to surface charging effects in reactive ion etching. It was observed that addition of certain percentage of N$-2$/ reduces the surface damage during reactive ion etching of silicon in a SF$-6$/ $PLU O$-2$/ plasma even though the N$-2$/ additive improved the etch rate and selectivity by 44 - 64%.!19