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Recent developments in RT-CVD technology for ULSI material processing and device fabrication: an overview

机译:用于ULSI材料处理和器件制造的RT-CVD技术的最新进展:概述

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Abstract: Rapid thermal chemical vapor deposition (RT-CVD) technology is strategically important for deep submicron ULSI manufacturing because of trends towards reduced thermal budget and tightened process control requirements on large diameter Si wafers, and has thus received considerable attention. In this paper, we will review the significant benefits provided by a novel in-situ multi-processing RT-CVD for IC manufacturing and the considerable progress made in developing RT-CVD as a integrated processing module capable of meeting the stringent requirements of ULSI device fabrication.!36
机译:摘要:快速热化学气相沉积(RT-CVD)技术对于深亚微米ULSI制造具有战略上的重要意义,因为它的趋势是减少热预算,并且对大直径Si晶片的工艺控制要求越来越严格,因此受到了广泛的关注。在本文中,我们将回顾用于IC制造的新型原位多处理RT-CVD所带来的显着优势,以及将RT-CVD开发为能够满足ULSI器件严格要求的集成处理模块所取得的巨大进展。捏造!! 36

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