Bismuth adn antimony nanolines in a Si epitaxial layer

摘要

We succeeded in fabrication of bismuth and antimony nanolines in a Si epitaxial layer.Perfect Bi nanolines form in the terrace of Si(001) in the case of Bi adsorption around its desorption temperature.Although simple epitaxy on this surface allows the surface segregation of Bi form the lines,additional Bi desorption on the line-formed surface before Si overgrowth forbids Bi surface segregation.Additional Sb adsorption instead of Bi led to Sb nanolines in the Si epitaxial layer.Those mechanisms can be explained by use of the analogy of a surfactant.