Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK;
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK;
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK;
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK;
Department of Physics and Astronomy, Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK;
Department of Physics and Astronomy, Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK;
Department of Physics and Astronomy, Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK;
Imago Scientific Instruments, 5500 Nobel Drive, Madison, WI 53711, USA;
Imago Scientific Instruments, 5500 Nobel Drive, Madison, WI 53711, USA;
Imago Scientific Instruments, 5500 Nobel Drive, Madison, WI 53711, USA;
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK;
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK;
机译:通过使用纳米棒反射器重定向横向发射,增强了GaN发光器件的集光能力
机译:InGaN-GaN量子阱结构上具有CdSe-ZnS纳米晶体的多色发光器件的色差控制
机译:结构控制的GaN微面上InGaN / GaN量子阱发射的加色混合
机译:INGAN / GaN量子阱发光装置发射增强硅掺杂的最佳设计
机译:GaN基发光二极管上的光学功能结构,用于提高光提取效率和控制发射模式。
机译:由于形成了半极性InGaN / GaN多量子阱而增强了发光
机译:结构控制的GaN微面上InGaN / GaN量子阱发射的加色混合