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Fabrication technique for high-aspect-ratio gratings

机译:高纵横比光栅的制作技术

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Abstract: High aspect ratio gratings are of interest for a couple of applications. Especially artificial birefringence based on zero order dielectric gratings are calling for small pitches (e.g. $LS 450 nm) and a high aspect ratio (e.g. $GRT 10 in fused silica). One of the most difficult problems is to reach the optical parameters that are demanded. Based on e- beam writing, ion beam etching, reactive ion beam etching and chromium coating we developed a technique for the fabrication of such gratings. In result, we reached phase retardation between TM and TE polarization of more than 90$DGR@. An iterative step technique allows realization of the phase retardation of accuracy better than 1%. The highest aspect ratios of the gratings, we fabricated, were in the range of about 25 at 440 nm period and 100 nm gap.!3
机译:摘要:高纵横比光栅在一些应用中很重要。尤其是基于零阶介电光栅的人工双折射要求小间距(例如$ LS 450 nm)和高纵横比(例如在熔融石英中的$ GRT 10)。最困难的问题之一是达到所需的光学参数。基于电子束写入,离子束蚀刻,反应性离子束蚀刻和铬涂层,我们开发了制造此类光栅的技术。结果,我们在TM和TE极化之间达到了超过90 $ DGR @的相位延迟。迭代步骤技术可实现精度优于1%的相位延迟。我们制造的光栅的最大纵横比在440 nm周期和100 nm间隙处约为25。3

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