Electrical characterization of Cu2O n-type doped with chlorine

摘要

Cuprous oxide or copper I oxide (CU_2O) is a p-type semiconductor (1) with a direct gap of 2.1 eV (2). It is a nontoxic material, with low production cost and high optical absorption coefficient (3). P-Cu_2O has been reported in the literature as active layer in solar cells (4) and emitter in metal base transistors (5,6). Since Cu_2O is naturally a semiconductor with p-type character that is attributed to the presence of Cu vacancies and split vacancy complexes (7), it is an important issue from technological point of view to obtain Cu_2O layers with controllable conductivity and having predictable properties when forming electrical contact with metals.