Characterization of Cu/Cu_(0.4)Ni_(0.4)P_(0.2) Thermocouples Fabricated on Silicon Surfaces Using Electroless Deposition

机译：化学沉积沉积在硅表面的Cu / Cu_（0.4）Ni_（0.4）P_（0.2）热电偶的表征

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In this work, it is presented the fabrication of Cu/Cu_(0.4)Ni_(0.4)P_(0.2) thermocouples onto silicon wafer surfaces. Both Cu and CuNi films were plated onto silicon surfaces by electroless deposition. The aerial concentration and films compositions were obtained by means of Rutherford Backscattering Spectrometry (RBS). The thermoelectric power of the fabricated thermocouples was 86±6 μV/℃, which is similar to the typical values reported in literature for Cu/CuNi.

机译：在这项工作中，提出了在硅晶片表面上制造Cu / Cu_（0.4）Ni_（0.4）P_（0.2）热电偶的方法。通过化学沉积将Cu和CuNi薄膜都镀到硅表面上。空气浓度和膜组成通过卢瑟福背散射光谱法（RBS）获得。制成的热电偶的热电功率为86±6μV/℃，与文献中报道的Cu / CuNi的典型值相似。

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来源
《Microelectronics technology and devices-SBMicro 2009》|2009年|165-171|共7页
会议地点 Natal(BR);Natal(BR)
作者
F. T. S. Parra; rnS. G. dos Santos Filho; rnA. E. B. Marques; rnS. Martini;
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作者单位

Laboratorio de Sistemas Integraveis, Escola Politecnica da USP, Sao Paulo, Brazil;

rnLaboratorio de Sistemas Integraveis, Escola Politecnica da USP, Sao Paulo, Brazil;

rnNucleo de Pesquisas em Microeletronica e Dispositivos Optoeletronicos, Centro de Pesquisas, Universidade Sao Judas Tadeu, Sao Paulo, Brazil;

rnNucleo de Pesquisas em Microeletronica e Dispositivos Optoeletronicos, Centro de Pesquisas, Universidade Sao Judas Tadeu, Sao Paulo, Brazil;

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正文语种 eng
中图分类微电子学、集成电路（IC）;
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Characterization of Cu/Cu_(0.4)Ni_(0.4)P_(0.2) Thermocouples Fabricated on Silicon Surfaces Using Electroless Deposition

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