STT-MRAMs for future universal memories: Perspective and prospective

摘要

Electron-spin based data storage for on-chip memories has the potential for ultra-high density, low-power consumption, very high endurance, and reasonably low read/write latency. In this article, we analyze the energy-performance characteristics of a state-of-the-art spin-transfer-torque based magnetic random access memories (STT-MRAM) bit-cell in the presence of parametric process variations. In order to realize ultra low power under process variations, we propose device and bit-cell level design techniques. Such design methods at various levels of design abstraction has been found to achieve substantially enhanced robustness, density, reliability and low power as compared to their charge-based counterparts for future embedded applications.