Modification of Schottky interface by the inclusion of DNA interlayer to create metal / organic / inorganic structures

摘要

In this paper, we describe the fabrication and testing of the organic/inorganic Al/DNA/Si Schottky diodes. DNA interlayers are introduced into silicon structures and their electrical characteristics are modified as a result of the Schottky barrier manipulation. Processing of the silicon and DNA is described and the details of the used materials are presented. The novel process step, introduction of an etched well, is described which enables defined concentrations of the DNA to be introduced onto the silicon structure. Techniques are described for verification of the structure throughout the fabrication process. Electrical measurements are made on the fabricated structures having different concentrations of DNA. These are compared, together with the identical structures fabricated without DNA interlayers, to show a parametric variation related to the DNA concentrations. Finally, imaging techniques are used to observe the structure of DNA on the silicon surface.