A compact circuit for wafer-level monitoring of operational amplifier high-frequency performance using DC parametric test equipment

摘要

A test structure has been developed to permit wafer-level measurement of the frequency response of an operational amplifier having a unity gain frequency on the order of 2 GHz using DC measurement equipment. This paper describes the design issues associated with implementing this test structure along with test data obtained from three commercial fabrication runs in 180 nm CMOS.