Test Structure to Extract Circuit Models of Nanostructures Operating at High Frequencies

摘要

We describe a test structure optimized for studying high-frequency electrical transport in 1-D nanoscale systems. The test structure exhibits lower transmission than previously reported structures, enabling capacitances less than 1 fF to be detected in the frequency response of the nanoscale system. The scattering parameters (S-parameters) of the test structure are describable to within ±0.5dB and ±2° from 0.1 to 50 GHz using a simple lumped-element RC circuit model whose elements are all measured experimentally.