Investigation of Verify-Programming Methods to Achieve 10 Million Cycles for 50nm HfO2 ReRAM

摘要

Abstract-50nm HfO2 resistive memory cells were measured by 6r7;6 verification variations to determine the optimal method to achieve 107 endurance and yield. A new conceptual model is proposed which combines the physical conduction model with direct tunneling, and provides a calculation method to predict resistance and explains degradation and Reset failure.