A 128 Kb HfO2 ReRAM with Novel Double-Reference and Dynamic-Tracking scheme for write yield improvement

摘要

References(18) A 128 Kb HfO2 Resistive Random Access Memory (ReRAM) chip is developed based on HHNEC 0.13 μm 1P8M CMOS process. ReRAM is suffering the write yield problem due to the tail-bit issues and large resistance variations at high temperature. In this paper a novel Double-Reference and Dynamic-Tracking Write (DR-DTW) scheme and a Dynamic read scheme are proposed to fix these issues. The experiment results show that the tail-bit issues are almost eliminated and the write yield is improved greatly compared with traditional write scheme.