INVESTIGATION OF DEGRADATION CAUSED BY CHARGE TRAPPING AT ETCHING-STOP LAYER UNDER AC GATE-BIAS STRESS FOR InGaZnO THIN FILM TRANSISTORS

著录项

• 来源
  《International conference on semiconductor technology for ultra-large scale integrated circuits and thin film transistors》|2019年|43-43|共1页
• 会议地点 Kyoto(JP)
• 作者

  Ting-Chang Chang; Mao-Chou Tai; Yu-Ching Tsao; Po-Wen Chang;

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• 作者单位

  National Sun-Yat Sen University;

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• 会议组织
• 原文格式 PDF
• 正文语种
• 中图分类
• 关键词

  Indium-Galium-Zinc-Oxide; Positive Bias Stress; Alternative current; Etching-stop layer;

  机译：铟镓锌氧化物;正偏压力;交流电蚀刻停止层;