Analytical model for the surface potential and electrical field distribution of BPSOI devices

摘要

A 2-D analytical model for the surface potential and electrical field distribution along the drift region of buried partial silicon on insulator (BPSOI) is presented. Based on the solution of the 2-D Poisson's equation, the model gives the influence on the surface electrical field of the drain bias and structure parameters such as the length of the poly gate-field-plate, the length of the buried layer, and the substrate doping concentration. The analytical results are well supported by the simulation results obtained by Medici.