Wavefunctions and Optical Gain in In_(0.24)Ga_(0.76)N/GaN Type-Ⅰ Nano-heterostructure Under External Uniaxial Strain

摘要

Wavefunctions and optical gain in a single In_(0.24)Ga_(0.75)N quantum well sandwiched between the GaN barriers has been reported. Optical gain within x-polarization and z-polarization have been investigated as quantum well width and external strain variations along [100]. The behavior of quasi Fermi levels for the valance bands and conduction bands have also been investigated. The InGaN/GaN type-I nano-heterostructure has been modeled and studied with the help of six band k ? p formalism. The 6×6 diagonalised k ? p Hamiltonian has been solved to evaluate the light and heavy hole energies. For an injected carrier density of 15 μ 10~(12)/cm~2, the peak optical gain is found to be 15904/cm at wavelength of 0.48 μm in x-polarization and the peak optical gain is found to be 1576/cm at a wavelength of 0.44 |xm in z-polarization.