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机译:用于SWIR应用的Ⅱ型In_(0.70)Ga_(0.30)As / GaAs_(0.40)Sb_(0.60)激光纳米异质结构的高光学增益的优化
Department of Physics, Banasthali University, Rajasthan, 304022, India;
Department of Physics, Banasthali University, Rajasthan, 304022, India;
Department of Physics, Aligarh Muslim University, Aligarh, 202002, UP, India;
Department of Physics, Banasthali University, Rajasthan, 304022, India;
Optical gain; Type-Ⅱ heterostructures; k.p method; SWIR region;
机译:II型In0.70Ga0.30As / GaAs0.40Sb0.60纳米异质结构在高压下的光学增益(SWIR区域)可调性
机译:带分散和光学增益计算的交错型GaAs_(0.4)Sb_(0.6)/ In_(0.7)Ga_(0.3)AS / GaAs_(0.4)Sb_(0.6)纳米异质结构在电场下和[100]应变
机译:外部单轴应变下Ⅱ型In_(0.5)Ga_(0.5)As_(0.8)P_(0.2)/ GaAs_(0.5)Sb_(0.5)纳米尺度异质结构中IR区域内的光学增益调谐
机译:Ⅰ型Al_(0.45)Ga_(0.55)的光学增益调谐为/ GaAs_(0.84)P_(0.16)/ Al_(0.45)Ga_(0.55)作为纳米异质结构
机译:用于优化等离子体纳米激光器的光学增益的空间分析
机译:用于WDm应用的增益钳位,无串扰,垂直腔激光半导体光放大器