Low-Power Resistive Switching Characteristics in TiN/TaON/SiO2/Pt RRAM devices for Neuromorphic Applications

摘要

In this work, the TiN/TaON/SiO2/Pt and TiN/TaON/Pt RRAM devices are fabricated and investigated. Compared with the TiN/TaON/Pt control device, TiN/TaON/SiO2/Pt RRAM devices with inserted SiO2 thin film show larger (x10) resistive window at the set compliance current of 1mA. TiN/TaON/SiO2/Pt RRAM devices show low-power resistive switching characteristic with set power of nearly 28.5μW (5.7V 5μA) and reset power of nearly 5.4μW (5.4V 1μA). Endurance characteristic with low-power resistive switching over 10^{6 is demonstrated. The inserted SiO2 thin film may play the role of current limiting layer to achieve the low-power resistive switching characteristics in TiN/TaON/SiO2/Pt RRAM devices.}