INTENSE PULSE LIGHT ANNEALING FOR PEROVSKITE PHOTOVOLTAICS

摘要

Rapid advancements within photovoltaics realm necessitates swift fabrication of the modules using cheap materials through cost effective manufacturing processes to achieve short cost payback time. Photovoltaics manufacturing includes chemical processing of the materials followed by thermal annealing. Yet, long-term annealing of the materials using high temperature furnaces have remained the prevalent post-processing approach in industry which necessitates alternative methods to achieve high performance modules through rapid and economical processes. Intense pulse light (IPL) has been successfully applied as a promising rapid post-process annealing for various thin film photovoltaics, particularly to process the organic-inorganic perovskite solar cell (PSC) layers. In this paper, several results pertinent to the application of IPL on perovskite and SnO_2 electron transport thin films are presented and the role of [PL on rapid thermal annealing (RTA) is explained. We show that swift fabrication of PSCs through IPL can result in efficiencies exceeding 16% when the Perovskite film is annealed with aid of CH_2I_2 alkyl halide additive in the ambient with 60% relative humidity. In addition, the synergy of IPL-alkyl halide interaction for other perovskite chemistries is introduced. We show that achieving to PSCs exceeding 12% efficiency was possible when the perovskite and SnO_2 ETL was annealed sequentially through IPL.