A Novel NAND-type MONOS Memory using 63nm Process Technology for Multi-Gigabit Flash EEPROMs

摘要

A novel NAND-type MONOS device has been successfully developed by breakthrough technologies including optimized cell structures and integration schemes providing favorable memory cell structures and peripheral circuits. In this study, optimized TANOS (TaN-Al{sub}2O{sub}3-Nitride-Oxide-Silicon) cells integrated using 63nm NAND flash technology showed high performance compatible to floating-gate (FG) cell. The newly-developed TANOS-NAND flash technology proved to be a promising candidate to replace FG memory beyond 50nm technology.