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Application of a new circuit design oriented Q extraction technique to inductors in silicon ICs

机译:一种新的电路设计方向Q提取技术在硅IC中的电感器中的应用

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Using a circuit design oriented Q extraction technique based on bandwidth (Q/sub bw/), Q factors of a wide range of inductor structures are studied and compared to Q factors extracted using the conventional technique (Q/sub conv/=-Im(y/sub 11/)/Re(y/sub 11/)). This new technique corrects the under-estimation problem of the Q/sub conv/ at moderate to high frequencies. Use of Q/sub conv/ can result erroneous conclusions leading to improper inductor optimization. To make the difference between Q/sub conv/ and Q/sub bw/ lower than 10% for all the examined inductors, the |W~/sub m/|/|W~/sub e/| (average magnetic energy/average electrical energy) ratio computed using the extracted inductor model parameters should be greater than /spl sim/20.
机译:使用基于带宽(Q / Sub BW /)的电路设计取向Q提取技术,研究了各种电感器结构的Q因子,并与使用传统技术提取的Q因子进行比较(Q / sum conv / = - IM( Y / SUB 11 /)/ RE(Y / SUB 11 /))。这种新技术校正了Q / Sub Conv / At中级至高频的估计问题。使用Q / Sub Conv / CAN导致错误结论导致电感不当的优化。在所有检查电感器的Q / Sum CONC /和Q / SUB BW /低于10%之间的差异,The | W〜/ Sub M / | / | W〜/ Sub E / | (使用提取的电感器模型参数计算的平均磁能/平均电能)比应大于/ SPL SIM / 20。

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