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Temperature Dependence of Carrier Mobility in SubPc and C_(60) Organic Semiconductors for Photovoltaic Applications

机译:用于光伏应用的子公司和C_(60)有机半导体中载流子迁移率的温度依赖性

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Carrier mobility is an important parameter in determining device performance in optoelectronics. Here, we study the charge carrier mobility of C_(60) and SubPc neat layers for different temperatures calculated in darkness. The results show that temperature affects the disorder energy (σ) of organic semiconductors; when the temperature is <289 K, this parameter is around 0.03 eV and it is double when the temperature is >289 K. In these conditions, the mobility of electrons and holes are around 0.14 and 10~(-7) Cm~2/Vs, respectively. Our results are in good agreement with experimental data reported by Pandey et al., Adv Funct Mater 22:617-624. 2012)
机译:载波移动性是在光电子中确定设备性能的重要参数。这里,我们研究C_(60)和Subpc纯层的电荷载流子迁移率,用于在黑暗中计算的不同温度。结果表明,温度会影响有机半导体的无序能量(σ);当温度<289 k时,该参数约为0.03eV,当温度> 289k时,它是双倍的。在这些条件下,电子和孔的迁移率约为0.14和10〜(-7)cm〜2 / vs分别。我们的结果与Pandey等人报告的实验数据一致,Adv Funct Mater 22:617-624。 2012年)

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