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Performance characterization of top-illuminate high-speed mesa-type InAlAs/InGaAs APD based on various dimensions of mesa active area

机译：基于MESA有源区的各种尺寸的顶级照射高速MESA型INALAS / INGAAS APD的性能表征

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DC and AC performance of InAlAs/InGaAs avalanche photodiodes in term of dark-current, capacitance, multiplication-gain and 3-dB frequency (f3-dB) were demonstrated. The f3-dB of 10-18 GHz was achieved using various dimensions of mesa active area.

机译：INALAS / INGAAS雪崩光电二极管的DC和AC性能在暗电流，电容，乘法增益和3-DB频率（F 3-db ）被证明。 F. 3-db 使用MESA活动区域的各种尺寸实现了10-18 GHz。

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《Opto-Electronics and Communications Conference》|2020年|1-3|共3页
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Po-Yuan Ding; Wen-Jeng Ho; Jheng-Jie Liu; Chi-Jen Teng; Chia-Chun Yu; Yen-Chu Li;
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Capacitance; Avalanche photodiodes; Dark current; Temperature measurement; Voltage measurement; Surface states; Photoconductivity;

机译：电容;雪崩光电二极管;暗电流;温度测量;电压测量;表面状态;光电导;

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专利

1. Temperature Dependence Study of Mesa-Type InGaAs/InAlAs Avalanche Photodiode Characteristics [J] . Jack Jia-Sheng Huang, H. S. Chang, Yu-Heng Jan, Advances in OptoElectronics . 2017,第期

机译：MESA型INGAAS / INALAS雪崩光电二极管特性的温度依赖性研究
2. A Low Dark Current Mesa-Type InGaAs/InAlAs Avalanche Photodiode [J] . Li B., Lv Q., Cui R., Photonics Technology Letters, IEEE . 2015,第1期

机译：低暗电流台面型InGaAs / InAlAs雪崩光电二极管
3. Effects Of An Anodic Oxide Passivation Layer On Mesa-type Ingaas (pin) Photodetectors [J] . Kefeng Zhang, Hengjing Tang, Xiaoli Wu, Semiconductor science and technology . 2009,第1期

机译：阳极氧化钝化层对台面Ingaas（pin）光电探测器的影响
4. Characterization of InAlAs/InGaAs APD arrays for SWIR imaging applications [C] . Joseph Boisvert, Andrey Masalykin, Geoffrey S. Kinsey, Conference on Infrared Technology and Applications XXX pt.1; 20040412-20040416; Orlando,FL; US . 2004

机译：用于SWIR成像应用的InAlAs / InGaAs APD阵列的表征
5. Growth and characterization of high-speed C-doped base InP/InGaAs heterojunction bipolar transistors using metalorganic molecular beam epitaxy. [D] . Thomas, Sunil. 1998

机译：利用金属有机分子束外延生长和表征高速掺C的基极InP / InGaAs异质结双极晶体管。
6. The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation [O] . Jheng-Jie Liu, Wen-Jeng Ho, June-Yan Chen, 2019

机译：基于台面结构的聚酰亚胺钝化InAlAs / InGaAs APD的制备与表征
7. The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation [O] . Jheng-Jie Liu, Wen-Jeng Ho, June-Yan Chen, 2019

机译：基于多酰亚胺钝化的台面结构的INALAS / INGAAS APDS的制造与表征
8. Characterization of heavy masses of two-dimensional conduction subband in InGaAs/InAlAs MQW structures by pulsed cyclotron resonance technology [R] . Kotera, N. , Tanaka, K. , Arimoto, H. , 1998

机译：利用脉冲回旋共振技术表征InGaas / Inalas mQW结构中重质量的二维传导子带

Performance characterization of top-illuminate high-speed mesa-type InAlAs/InGaAs APD based on various dimensions of mesa active area

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