Resistive Switching Memory Effect and Conduction Mechanism in Nano-Silver Incorporated Type-A Gelatin Films

摘要

This paper presents the conduction mechanisms and the observation of bipolar resistive switching in nano silver incorporated gelatin (AgG) composite films. Different concentrations of commercially purchased silver nanoparticles (0.3 w/v%, 0.5 w/v%, 0.7 w/v%) were incorporated in gelatin and AgG films were spin-coated on ITO substrates. We did systematic study of I- V characteristics in these films. The film with 0.5 w/v% exhibits an abrupt increase in current at 6 V with ON/OFF ratio of more than 3 orders of magnitude. Further, the I- V characteristics revealed O-type hysteresis behaviour along with hopping type of conduction for higher nano particle concentrations of 0.5 and 0.7w/v%. However, for much dilute concentration of Ag (0.3 w/v%), the conduction is of ohmic type.