Reverse Recovery Characteristics of the IGBT Anti-Parallel Diode with Variation in Operating Conditions: An Experimental Study

摘要

In this paper the focus is to study the switching characteristic of anti-parallel diode in an IGBT module. The switching characteristic parameters reverse recovery time, peak reverse recovery current and corresponding energy loss during the diode turn-off transition are studied experimentally. The relationship of these characteristic parameters with the operating conditions, namely, switching voltage, device current and junction temperature is presented. This experimental study enables to decide the right diode characteristic and precise determination of device switching loss with the knowledge of IGBT switching characteristics.