Design and electromagnetic Simulation of a 40 dBm Class-AB GaN power amplifier

摘要

Because of the high increment in demand a wide arrangement of applications that require for low-cost, high-efficiency, and compact systems, RF power amplifiers are viewed as the most basic design blocks and power consuming components in wireless communication, radar, and TV transmission. Therefore, much research has been carried out in order to improve the performance of power amplifiers. This paper focuses on the design, electromagnetic Simulation and the harmonic balance analysis for a GaN 40 dBm class AB power amplifier operating at 3.7 GHz. The Transistor, Cree CGH 40010F GaN is choosed. It is a general purpose 10W transistor. The amplifier will operate at class AB and the suggested bias for this class is Vgate = -2.73V, Vdrain = 28V and iD= 200mA. the simulated output power is about 40 dBm, and the PAE is about 65%, and the gain >11 dB.